Comments on: Development of Industry’s Lowest Current Consumption CMOS OPAMPS by ROHM http://japantechniche.com/2009/11/09/development-of-industry-lowest-current-consumption-cmos-opamps-by-rohm/ Japan Technology Information will bring you the most recent technological information from Japan Wed, 17 Mar 2010 04:34:52 -0500 http://wordpress.org/?v=2.8.6 hourly 1 By: Development of World's First Low-Resistance 300A single-Chip SiC Trench MOSFET by ROHM | Japan Technology Information http://japantechniche.com/2009/11/09/development-of-industry-lowest-current-consumption-cmos-opamps-by-rohm/comment-page-1/#comment-1379 Development of World's First Low-Resistance 300A single-Chip SiC Trench MOSFET by ROHM | Japan Technology Information Tue, 17 Nov 2009 07:39:15 +0000 http://japantechniche.com/?p=3720#comment-1379 [...] connection of several large area Si chip capable of outputting 200A to 300A. In order to increase current is necessary to reduce ON resistance while at the same time increasing the surface area of the chip. [...] [...] connection of several large area Si chip capable of outputting 200A to 300A. In order to increase current is necessary to reduce ON resistance while at the same time increasing the surface area of the chip. [...]

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