Development of World’s First Low-Resistance 300A single-Chip SiC Trench MOSFET by ROHM
The inherent deficiency of silicon semiconductor devices during power conversion has forced many designers to look for alternative semiconductor material. One such material is silicon carbide due to its superior material properties leading to increase in power conversion efficiency in these type of devices. Power conversion modules for such application as electric vehicles,power transmission and railroads require a minimum current capacity of approximately 600A which is currently possible through parallel connection of several large area Si chip capable of outputting 200A to 300A. In order to increase current is necessary to reduce ON resistance while at the same time increasing the surface area of the chip. Even though the SiC features an excellent ON resistance characteristics increasing the area results in a greater number of crystal defects which leads to device failure. To overcome this issue, Rohm has refined its epitaxial process technology helping to reduce the crystal defects, making it possible to expand chip area by 2.5 times and additionally through this refining the ON resistance has been reduced by 20% by way of improving voltage resistance structure resulting in current capacity of 300A. The company is expecting this technology will significantly increase efficiency in large current demanding applications such as hybrid/electric vehicles, power transmission and railroads. The sample of this product will be avaialbe by spring of 2010.
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