Development of Next Generation Liquid Electrolytes for Lithium Ion Batteries by SDK
Show Denko KK made an announcement that it will develop a new liquid electrolytes (LIBs) for lithium ion batteries targeted to be used for automobile application. The newly developed LIB utilizes a new and stable electrolyte salt (Li2B12FxH12-x), can replace the conventional electrolyte salts. The new slat has been developed by Air Products and chemicals of the Untied States where SDK has obtained the license. SDK will use the new salt plus its own propriety liquid electrolyte technology in developing the new electrolyte. The use of new slat in the next generation electrolytes is expected to be advantageous due to its inherent characteristics which minimizes reaction with water, it does not generate cathode-corroding acids with the laps of time and has a capability of operating at higher temperatures characteristics that are desirable for automotive applications. The new electrolyte will prevent or at least inhibit the risk of ignition which results from overcharge of LIBs as well as battery deterioration due to oxidant that are generated in liquid electrolytes after repeated charges and discharges resulting in increased in total electric current (i.e. battery capacity ) according to the company.SDK is planning to sell 60 billion yen of advance battery materials in 2020.
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[...] Showa Denko made an announcement on development of highly smooth (0.4nm in roughness) surface for its largest size four-inch silicon carbide (SiC) epitaxial wafers. The wafers are made by forming a thin layer of single-crystal SiC on the surface of SiC bulk wafers. This new development is a significant improvement in surface roughness in comparison to the SiC epitaxial wafers that come with the roughness of 1 to 2.5 nm, world’s highest level at 0.4 nm. The target application for SiC epitaxial wafers would be in power devices such as inverters responsible for controlling rotation of motors in automobiles, train and industrial/home electric appliances, where the SiC epitaxial wafers will outperform the currently used silicon based semiconductor. In making of SiC based inverters, Schottky barrier diod (SBD) and metal semiconductor field-effect transistor (MOSFET) should be used. While SiC-SBD is already available in the market, SiC-MOSFET development is still underway to fulfill it requirement for high surface smoothness as it uses oxide film formed on the surface of epitaxial wafers in device operation. Highly uneven surface in conventional SiC epitaxial wafers make it difficult to obtain a high quality oxide film, making the new development a great contributor to the early development of SiC-MOSFET as well as next generation inverters. The SiC power devices for the next generation inverters are capable of operating at a high temperatures and under high-voltage heavy current making them suitable for production of small and light-weight power control parts for automobiles, industrial/home electric appliances. At the same time the new device will contribute in reduction of energy loss in process of power control, conserving energy and restricting heat generation in parts. The SiC inverters are expected to be used in electric vehicles and hybrid cars. source Share and Enjoy: [...]
[...] range between 100 to 300 degrees Celsius involving hot springs and diesel engines. Based on this, Showa Denko (SDK) and Plantec have made an announcement on full scale demonstration of thermoelectric power [...]