http://japantechniche.com/2009/11/19/development-of-next-generation-liquid-electrolytes-for-lithium-ion-batteries-by-sdk/ Japan Technology Information will bring you the most recent technological information from Japan Mon, 15 Mar 2010 05:56:24 -0500 http://wordpress.org/?v=2.8.6 hourly 1 http://japantechniche.com/2009/11/19/development-of-next-generation-liquid-electrolytes-for-lithium-ion-batteries-by-sdk/comment-page-1/#comment-1719 Thermoelectric Power Generation Based on Waste Heat | Japan Technology Information Wed, 03 Feb 2010 14:40:10 +0000 http://japantechniche.com/?p=3823#comment-1719 [...] range between 100 to 300 degrees Celsius involving hot springs and diesel engines. Based on this, Showa Denko (SDK) and Plantec have made an announcement on full scale demonstration of thermoelectric power [...] [...] range between 100 to 300 degrees Celsius involving hot springs and diesel engines. Based on this, Showa Denko (SDK) and Plantec have made an announcement on full scale demonstration of thermoelectric power [...]

]]> http://japantechniche.com/2009/11/19/development-of-next-generation-liquid-electrolytes-for-lithium-ion-batteries-by-sdk/comment-page-1/#comment-1453 Development of World's Smoothest Silicon Carbide Epitaxial Wafer Surface by SDK | Japan Technology Information Wed, 09 Dec 2009 08:00:26 +0000 http://japantechniche.com/?p=3823#comment-1453 [...] Showa Denko made an announcement on development of highly smooth (0.4nm in roughness) surface for its largest size four-inch silicon carbide (SiC) epitaxial wafers. The wafers are made by forming a thin layer of single-crystal SiC on the surface of SiC bulk wafers. This new development is a significant improvement in surface roughness in comparison to the SiC epitaxial wafers that come with the roughness of 1 to 2.5 nm, world’s highest level at 0.4 nm. The target application for SiC epitaxial wafers would be in power devices such as inverters responsible for controlling rotation of motors in automobiles, train and industrial/home electric appliances, where the SiC epitaxial wafers will outperform the currently used silicon based semiconductor. In making of SiC based inverters, Schottky barrier diod (SBD) and metal semiconductor field-effect transistor (MOSFET) should be used. While SiC-SBD is already available in the market, SiC-MOSFET development is still underway to fulfill it requirement for high surface smoothness as it uses oxide film formed on the surface of epitaxial wafers in device operation. Highly uneven surface in conventional SiC epitaxial wafers make it difficult to obtain a high quality oxide film, making the new development a great contributor to the early development of SiC-MOSFET as well as next generation inverters. The SiC power devices for the next generation inverters are capable of operating at a high temperatures and under high-voltage heavy current making them suitable for production of small and light-weight power control parts for automobiles, industrial/home electric appliances. At the same time the new device will contribute in reduction of energy loss in process of power control, conserving energy and restricting heat generation in parts. The SiC inverters are expected to be used in electric vehicles and hybrid cars. source Share and Enjoy: [...] [...] Showa Denko made an announcement on development of highly smooth (0.4nm in roughness) surface for its largest size four-inch silicon carbide (SiC) epitaxial wafers. The wafers are made by forming a thin layer of single-crystal SiC on the surface of SiC bulk wafers. This new development is a significant improvement in surface roughness in comparison to the SiC epitaxial wafers that come with the roughness of 1 to 2.5 nm, world’s highest level at 0.4 nm. The target application for SiC epitaxial wafers would be in power devices such as inverters responsible for controlling rotation of motors in automobiles, train and industrial/home electric appliances, where the SiC epitaxial wafers will outperform the currently used silicon based semiconductor. In making of SiC based inverters, Schottky barrier diod (SBD) and metal semiconductor field-effect transistor (MOSFET) should be used. While SiC-SBD is already available in the market, SiC-MOSFET development is still underway to fulfill it requirement for high surface smoothness as it uses oxide film formed on the surface of epitaxial wafers in device operation. Highly uneven surface in conventional SiC epitaxial wafers make it difficult to obtain a high quality oxide film, making the new development a great contributor to the early development of SiC-MOSFET as well as next generation inverters. The SiC power devices for the next generation inverters are capable of operating at a high temperatures and under high-voltage heavy current making them suitable for production of small and light-weight power control parts for automobiles, industrial/home electric appliances. At the same time the new device will contribute in reduction of energy loss in process of power control, conserving energy and restricting heat generation in parts. The SiC inverters are expected to be used in electric vehicles and hybrid cars. source Share and Enjoy: [...]

]]> http://japantechniche.com/2009/11/19/development-of-next-generation-liquid-electrolytes-for-lithium-ion-batteries-by-sdk/comment-page-1/#comment-1389 Development of Next Generation Liquid Electrolytes for Lithium Ion … | Drakz News Station Thu, 19 Nov 2009 16:44:55 +0000 http://japantechniche.com/?p=3823#comment-1389 [...] this article: Development of Next Generation Liquid Electrolytes for Lithium Ion … Share and [...] [...] this article: Development of Next Generation Liquid Electrolytes for Lithium Ion … Share and [...]

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