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Development of a High Resolution Photo-Sensetive film for EUV lithography by TOSHIBA

November 21, 2009 · Filed Under Trendy Products 

With advancement of semiconductor technology as well as increase in wiring density use of the conventional polymer photoresists which is the base materials for conventional semiconductor resist will face some difficulties. With current scaling down of circuit pattern at the 20nm-scale generation the present photoresits will not be capable of resolving circuit patterns precisely resulting in roughness in pattern sidewalls, this is mostly due to the fact that the conventional photoresists consists of polymer compounds. Although, such compounds are easier to spin-cast on wafers, the size of their molecules and entangling of their molecular chains limit resolution. In response to overcome this issue, Toshiba has developed a photoresists with smaller molecular compounds for EUV (Extreme UltraViolet) generation by using derivative of truxene, a low molecular material with a finer and more durable characteristic than currently used polymer materials. Toshiba has successfully applied this newly resists to positive tone process as well as to the more demanding task of the negative tone, and further forming a test pattern in the 20nm-scale generation. The semiconductor circuit patterning requires photoresists that can be used in both positive as well as negative tone processes in order to provide a precise structuring. Once a photoresists is exposed to light, it is then removed from the substrate with a developer solution in one of two ways, positive and negative tone. In case of positive tone development the area that is exposed to the light source is removed from the wafer leaving a channel. In case of negative tone development, the area that has not been exposed to the light source is removed from the wafer, leaving a raised area, where application of both processes is essential for etching wafers.

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One Response to “Development of a High Resolution Photo-Sensetive film for EUV lithography by TOSHIBA”

  1. Development of a Mask Pattern Optimizing Technology for Improving Accuracy of Lithography for LSIs | Japan Technology Information on February 15th, 2010 9:23 am

    [...] which utilizes an even shorter wavelength. In order to further optimize the placement of SRAF, Toshiba and the National Institute of Advanced Industrial Science and Technology (AIST) have jointly [...]

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