Development of Technology in making Graphene transistors at low temperature on large scale substrates by Fujitsu
As miniaturization technology is approaching its limit plus achieving further higher performance is increasingly becoming more difficult, forcing component manufacturers to seek alternative materials to currently used silicon such as transistor channels, the conduits that pass electricity in LSIs. One such material is Graphene a nano-scale carbon material which is essentially a single layer of the multi-layered graphite. In graphene individual carbon atoms are linked into a hexagonal lattice that is laid out in a flat sheet. The single sheet of graphene were first separated successfully back in 2004, and it was found then that it possesses an excellent electrical characteristics due to its inherent high electron mobility in comparison to silicon, paving the way for its future use in fast, low voltage transistors. Based on this, Fujitsu Laboratories made an announcement on development of a technology for making graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures and employing chemical Vapor Deposition (CVD) techniques, a technique that is in widespread use in semiconductor manufacturing. Fujitsu has successfully decreased the graphene fabrication temperature to 650 degrees Celsius in comparison to conventional graphene formation method which is achieved at temperature range of 800 to 1000 degrees Celsius. This achievement would allow grahpene transistors to be formed directly on a variety of insulator substrates, which includes substrates that are sensitive to the higher temperatures. The new technology is still distance away from its practical use where the graphene can be formed directly on conventional glass at a temperature of approximately 550 degrees Celsius. Graphene a transparent material which passes light well and with a thickness of only few nanometers is an ideal candidate material to be used as channel and electrode material in thin-film transistors which is used in video displays.
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