Development of Spintronics based MOSFET an Advance Semiconductor technology by TOSHIBA
On-going advancement in MOS field-effect transistor (MOSFET) devices as the result of continuing miniaturization of devices will inevitably hit its limit in view of such issues as performance degradation due to increase in resistance of global wiring and increase in power consumption caused by current leakage. In overcoming this issue spintronics has been considered as an ideal candidate among potential solutions in solving this issue, however the application of spintronics in transistors is at its early stage and it has been partially proved.
At the magnetic layer the electrons are naturally spin polarized in one or two spin states which is spin up or spin down and the majority state is the determining factor in spin state. AT the magnetic layer these spin states are more and less permanent resulting in a nonvolatile characteristics that can be used in storing data. At the same time, spin current can be flowed into the same spin state in a magnetic layer resulting in an ability to change the impedance characteristics that determines the Read signal of a spin device. Based on this inherent characteristics of magnetic layer and the current issues that are facing current miniaturization technologies, Toshiba has developed a MOSFET cell based on spin transport electronics or otherwise known as spintronics, as advance semiconductor technology which make use of the spin and magnetic moment inherent in electrons. This is the first time that a company has fabricated a spintronics cell and has verified its stable performance. In developing this technology Toshiba has introduced magnetic layers into the source and drain of a MOSFET cell and has successfully managed to control the spin direction by the spin-transfer-torque-switching (STS) method as well as applying gate and source/drain voltages. Toshiba has applied a magnetic tunnel junction ( a structure with two layers of magnetic metals separated by an insulator layer responsible for controlling resistance with one side polarization fixed and the other layer controlled by magnetization inversion.) for write operation of STS in the magnetic layers, formed with full-Heusler alloy, an inter-metallic capable of acting as a high spin polarizer. This new development will pave the way for the next generation non-volatile semiconductor devices which can be used as reconfigurable logic devices and non-volatile LSI chip with memory function aboard.
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