Development of New ECOMOS Series of n-channel and p-channel MOSFET by ROHM
Rohm Semiconductor made an announcement on development of new ECOMOS series of n-channel and p-channel MOSFET capable of efficiently handling reduced supply voltages in portable devices. The company’s proprietary process has resulted in improved on-resistance at a very low gate drive voltage with addition of small footprint and low-profile packages requiring less board space, in meeting the requirement of emerging generation of portable electronic devices. Combined with improved electrical performance and Rohm’s unique packaging design makes the new MOSFETs both highly efficient with excellent power dissipation in addition to its small footprint. The new ECOMOS 1.5V products are offered in three package sizes depending on maximum power dissipation in configurations that includes single p-channel or n-channel devices (with or without schottky barrier diode) and complex, muli-die dual p- or n-channel devices. The new MOSFETs are available for sample shipment, with small OEM quantity pricing of 0.16 to 0.46 US dollar.
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[...] portable radios as well as electronic toys to name a few. Rohm through development of this MOSFET has succeeded to control current leakage by optimizing the MOSFET gate layer and the channel profile [...]