Integration of NanoBridge in the Cu Interconnects of Si LSI by NEC
In recent years the market demand for filed programmable logic has been growing steadily mainly due to their role in reducing both time for the development and cost, since the time from development phase to market introduction for electronic equipment has become increasing important. Up to now, the way to enhance the performance and in introducing multi-functionality in electronic devices rested upon reducing the size of transistors enabled programmable logic. However, size reduction on transistors coupled with current leakage due to an increase in stand-by power has dampened further reduction in transistors size, forcing the manufacturers to come up with innovative technologies in enhancing the performance of programmable logic. Based on this need, NEC in collaboration with National Institute of Materials Science has made an announcement on successful integration of NanoBridge, a solid electrolyte non-volatile crossbar switch, in Cu interconnects which is placed on CMOS logic paving the way for development of low cost high performance programmable logic LSI. Among some of the features of newly developed NanoBridge technologies are, its TaSiO/TiO2’s bi-layer solid-electrolytes capable of enhancing durability against thermal diffusion as well as plasma treatments causing the oxidation of Cu electrodes and the diffusion of Cu into solid electrolytes during multilevel Cu interconnection processes, resulting in an improved process yield and the variability of NanoBridge’s electrical characteristics, and production of highly scalable 4×4 crossbar switch without the use of circuit selecting transistors which is used in conventional switches, its adoption by 32nm-node CMOS logic because of its size reduction to 50nm, 1/4 the size of conventional technologies.
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