Development of New Power Amplifier for WiMAX Terminal Equipment by Mitsubishi Electric
Mitsubishi Electric made an announcement on development and sale of a new Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT) power amplifier targeted for WiMAX subscriber terminal equipment. The newly developed module is capable of producing high output power of 28.5 dBm3 which is 1.5 dB higher than the existing module with low distortion of less than 2.5% EVM. The module measures only 4mm x 4mm ensures the wider service areas and improved signal quality for WiMAX systems. The new module includes two functional circuits which is a power detector for precise monitoring of output power as well as a one-bit step attenuator for easy control of output power. Matching 50 ohm input and output circuits are integrated into the amplifier, eliminating any needs for additional matching circuits on the customer’s board. The new module is expected to help in development of smaller form factor and lighter WiMAX terminals. The sample shipping to commence on January 25th, 2010 at 1,000 JPY and the monthly production will be at 100,000 pieces per month.
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