Development of GaN based High Electron Mobility Transistors for L to C Band Amplifier by Mitsubishi Electric
The most commonly used power amplifier today are based on gallium arsenide (GaAs) used in microwave transmitters, however gallium nitride (GaN) based amplifiers are gaining market attention due to their high breakthrough voltage and high saturated electron speed, resulting in building High Electron Mobility Transistors (HEMT) that are higher in power density contributing to energy saving, while making the transmitter more compact in size and lightweight with an expanded operating life cycle. Based on this Mitsubishi Electric has made an announcement on development of new GaN based HEMT with 10W, 20W and 40W outputs ideal for L and C band (0.5 -6 GHz) amplifiers.
The three newly developed HEMTs are incorporated into base stations for mobile phones, very small aperture terminals and other type of transmission equipment. The HEMTs feature a high voltage operation of 47 V and comes in a small sized package of 4.4 mm x 14.0 mm help in reducing mounting surface in amplifiers.
The company is planning for sample shipment of the new products by August 2010.
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