Release of New MOSFET Products with HSON Packages for Automotive electronic Control Units by RENESAS

August 9, 2010 · Filed Under Trendy Products 

Renesas Electronics has introduced seven new MOSFET (metal-oxide-semiconductor field-effect-transistor) products which are equipped with 8-pin HSON packages (half the size of the existing TO-252 package) designed to be used for automotive electronic units for such application as direct injection engine management and electric pump motor control. The new MOSFET products include N-channel MOSFETs with voltage rating of 40 and 60 volts as well as P-channel MOSFETs that can be used for solenoids and motor switching or for protection against reversed battery conditions.
The new products can switch currents up to 75 amperes DC as well as supporting channel temperatures of up to 175 degrees Celsius. The volume production of the new products is scheduled for this month.

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3 Responses to “Release of New MOSFET Products with HSON Packages for Automotive electronic Control Units by RENESAS”

  1. Tweets that mention Release of New MOSFET Products with HSON Packages for Automotive electronic Control Units by RENESAS | Japan Technology Information -- Topsy.com on August 9th, 2010 3:49 pm

    [...] This post was mentioned on Twitter by Joseph Gamble, Siamak Deilami. Siamak Deilami said: japantechniche: Release of New MOSFET Products with HSON Packages … http://bit.ly/cQitof [...]

  2. Computer Knowledge Shoroom | laptop computers blog on August 10th, 2010 12:00 am

    [...] Release of New MOSFET Products with HSON Packages for Automotive … [...]

  3. Introduction of New Power MOSFET Products by RENESAS | Japan Technology Information on August 30th, 2010 5:39 am

    [...] Renesas Electronics has released three new power MOSFET products, the RJK0210DPA, RJK0211DPA, and RJK0212DPA, designed for DC/DC converters that area used in such application as general point-of-load, base stations, computer servers as well as notebook PCs. The new power MOSFET are capable of controlling the voltage conversion circuits of the CPU and memory, like being used as a step-down circuit for converting the 12-volt voltage supplies by a battery to 1.05 V for use by CPU. The new products achieve approximately 40% lower figure of merit (FOM), on-state resistance times gate charge in comparison to the company’s existing products, resulting in reduction of power loss during the voltage conversion. Furthermore, the new power MOSFET feature a voltage tolerance of 25 V and maximum current of 40 amps (A) RJK0210DPA, 30 A for the RJK0211DPA and 25 A for the RJK0212DPA device. The new MOSFET uses company’s WPAK package measuring 5.1 x 6.1 mm and 0.8 mm thick. The underside of the device has a die pad allowing heat to pass to the printed wiring board while the MOSFET is operating, allowing the power MOSFET to handle large current. Samples of all three MOSFET are currently available with mass production to commence in December of 2010, with a planned monthly production of 2,000,000 units by July 2011. // < ![CDATA[ google_ad_client = "pub-6269321203424610"; /* 200x200, created 5/19/09 */ google_ad_slot = "6030618320"; google_ad_width = 200; google_ad_height = 200; // ]]> Share and Enjoy: [...]

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