Development of Novel Material for use in Involatile Phase-Change Random Access Memory
Group of Japanese researchers at Tohoku University has successfully developed materials for Ge-Cu-Te phase-change random access memories (PCRAM) featuring a high thermal stability and a low melting point. The new development was with an aim to resolve such problem as data loss under the environment at high temperature, helping to save data for period of ten years under the environment at more than 125 degrees Celsius. In addition to this the new material will help to reduce power consumption for data rewiring.
The new materials can be applied for involatile PCRAMs used at high temperatures including automotive field, as well as fast USB memories. PCRAM for its simple structure seems to be the more favorable solution for cost effective production as well as high integration among other alternatives such as magnetic random access memory (MRAM) and ferroelectric random access memory (FeRAM).
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