Introduction of High Efficient LED Driver IC for LED Lighting by Renesas
One of the fastest LED market is in the field of lighting as a replacement for incandescent light bulbs, but use of direct current (DC) drive by LEDs, necessitates the conversion of alternating current (AC) power supply to DC. This requirement, bring a demand for elements that are designed to address issues such as cost, conversion efficiency as well as power factor. Based on this need Renesas Electronics has developed a highly efficient LED driver IC with high power factor and low cost in mind. In reducing the system cost, Renesas has introduced a voltage step-down control technology (single-stage), providing a high line-to-ground voltage. In addition to this the company has used low voltage MOSFET with a voltage tolerance of only 500 volts to 300 V, instead of typical 700 V.
In achieving its high efficiency as well as high power factor, Renesas has devised high-voltage control and critical-conduction mode, enabling zero-current switching at turn-on and switching in a low drain-source voltage state, resulting in reduction of power loss during switching, and industry leading power factor of 92%. In addition to this, critical-conduction mode allows PFC (Power Factor Correction) control to use fewer external components, with a power factor of 0.9 or higher. The samples of new R2A20134 LED driver IC are available of this month at a unit price of $1. The mass production will commence in March of 2011, with a expected monthly production of 3 million.
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[...] Renesas Electronics has successfully developed a new analysis method for a time-dependent variability phenomenon, referred to as random telegraph noise (RTN). The new method can be used for analysis of statistical behavior of traps, microscopic defects in the gate dielectric layer that capture and emit a single charge. This will result in predictive simulation that is required for designing highly reliable next-generation system LSIs. RTN is a phenomenon which occurs when the current flowing in a transistor changes discontinuously with time due to the capture of emission of a single elementary charge in a trap. Although it is known that RTN may possibly cause the malfunction of system LSIs in the near future, its complete elimination cannot be avoided through improvement in fabrication process, leading the way in designing system LSIs that can prevent malfunction even in presence of RTN. Further to this, RTN is a random variation phenomenon due to the fact that, the characteristics and number of the traps are determined randomly, thus making the statistical methods a crucial method in analyzing it. One of the key features of this newly developed method is its capability for measuring the waveform of the transistors at multiple gate voltage conditions in determining the energy levels, amplitudes as well as trap positions. This procedure is done automatically for multiple transistors. // < ![CDATA[ google_ad_client = "pub-6269321203424610"; /* 200x200, created 5/19/09 */ google_ad_slot = "6030618320"; google_ad_width = 200; google_ad_height = 200; // ]]> Share and Enjoy: [...]