Introduction of Highly Efficient Power Semiconductor for DDR type SDRAM, FPGAs by Renesas Electronics
Renesas Electronics has announced the release of a power semiconductor device which is designed for use as a dedicated power supply for DDR type SDRAM memory and large scale logic devices such as FPGAs used in PCs, servers and printers. The newly developed R2J20751NP is industry’s first POL converter with a 25 A maximum rating, which integrate MOSFETs and power supply controller in one single package helping system designers to realize power supply systems that are compact and energy efficient.
The R2J20751NP is capable of converting a 5 V power supply to 1.5 V level which is required by memory modules. The new R2J20751NP features an efficiency of 94.5 percent when operating with an output current of 5 A. The integration of two MOSFETs and a pulse width modulation (PWM) control IC with on-chip driver into a single ultra-compact package reduces the mounting area by approximately 60% in comparison to company’s existing products. Among some of the key features on the R2J20751NP is scalable multi-phase operation allowing multiple devices to be connected in a master-slave configuration, and built-in protection functions needed for DC-DC POL converters, including overcurrent protection and overvoltage protection. The R2J20751NP comes in a 40-pin QFN package with excellent heat dispersion characteristics. The new R2J20751NP device is available commencing February 2011 with the price tag of US$3.33. The mass production is scheduled to begin in March 2011, with a expected monthly production of 500,000.
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[...] Renesas Electronics has developed a compact optical coupled MOSFET featuring a low output capacitance. The new MOSFET achieves complete electrical isolation with its package due to use of light for signal transmission. The newly developed PS7901D-1A comes in an industry’s leading ultra-compact 4-pin flat-lead package, measuring only 2.9 mm x 2.3 mm, making it 40% smaller that existing PS78 series product. The new MOSFET combines low output capacitance of 0.75 picofarads and low leakage current, making the new MOSFET ideal for high frequency signal control in such application as IC testers as well as factory automation equipment, and office equipment. The newly developed PS7901D-1A comprises of a LED converting an electrical signal into light from input side and a photo voltaic diode (PVD) that converts light into an electrical signals on the output side as well as output MOSFET. Use of light to transmit the signal means that, input and output sides are completely isolated from one another electrically, making it a solid state relay (SSR) device. // < ![CDATA[ google_ad_client = "pub-6269321203424610"; /* 200x200, created 5/19/09 */ google_ad_slot = "6030618320"; google_ad_width = 200; google_ad_height = 200; // ]]> Share and Enjoy: [...]