Development of Insulated Gate Bipolar Transistor Module for Advanced Neural Point Clamp Circuits by Fuji Electric
Fuji Electric System has announced the development of insulated gate bipolar transistor (IGBT) module for advanced Neural Point Clamp (NPC) circuit series. The new IGBT module features industry’s first 3-level converter circuit in a single package will dramatically lower power loss. The reduction in power loss has been achieved by producing a waveform that is closer to a sine wave than conventional 2-level type module, which is done by expanding the number of output voltage steps to three levels. In addition to this, company has incorporated an RB-IGBT (reverse blocking IGBT), eliminating any needs for a diode for blocking reverse current, resulting in a more efficient operation of converter circuit.
The adoption of 3-level circuit in a single package will further contribute to dramatic reduction in device size, required by power source equipment, such as power conditioners for photovoltaic power generation and uninterrupted power supplies (UPS). The new module is the world’s first in including IGBT, FWD and RB-IGBT in a single package for a 3-level platform.