Development of World’s Largest Density and Smallest Die Size 19nm NAND Flash Memory
Toshiba has announced major advances in chip density and performance by developing world’s largest and smallest die size 19nm class NAND flash memory. The memory chip features 3-bit-per-cell 128 Gb capacity with die size of 170mm and write speed of 18MB/s. The new 3-bit-per-cell 19nm NAND flash memory uses the three-step programming algorithm and air-gap technology for transistors, resulting in reduced coupling between memory cells, a reason for faster write speed of 18MB/s.
In developing this chip Toshiba has optimized the peripheral circuit structure of the chip with 20% reduction in area in comparison to currently available chip.
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