Release of 300mm Atomic Layer Deposition SiO2 System by Tokyo Electron

April 13, 2012 · Filed Under Trendy Products 

In an effort to fulfill market demand for high quality nano-scale film applications for the next generation 1Xnm, Tokyo Electron has developed NT333™, an Atomic Layer Deposition SiO2 (ALD-SiO2) system capable of effective deposit with a very tight thickness control with in range of less than 1A, and productivity of 100 plus wafers per hour.
The new NT333 offers a very low wet etch rate, which is on-par with thermal oxide, allowing the use of existing integration schemes. Furthermore, the oxide films produced from NT333 achieve a very low leakage performance.

Be Sociable, Share!
TrendyMix Inc.


Comments are closed.

Custom Search

TrendyMix Inc.

Follow siamakdeilami on Twitter

Add to Technorati Favorites Blog Directory by Blog Flux

metaio Inc.

Electrical Engineering Community
  • cheap nfl jerseys
  • wholesale jerseys
  • wholesale nfl jerseys china
  • cheap super bowl jerseys