Release of 300mm Atomic Layer Deposition SiO2 System by Tokyo Electron
April 13, 2012 · Filed Under Trendy Products
In an effort to fulfill market demand for high quality nano-scale film applications for the next generation 1Xnm, Tokyo Electron has developed NT333™, an Atomic Layer Deposition SiO2 (ALD-SiO2) system capable of effective deposit with a very tight thickness control with in range of less than 1A, and productivity of 100 plus wafers per hour.
The new NT333 offers a very low wet etch rate, which is on-par with thermal oxide, allowing the use of existing integration schemes. Furthermore, the oxide films produced from NT333 achieve a very low leakage performance.
