Development of GaN Wafers Doubling Luminous Efficiency of LEDs
NGK Insulator Ltd, Japanese company based on Nagoya has announced the development of gallium nitride (GaN) wafer which would help to double the luminous efficiency of a Led light source. The new wafer has been developed based on liquid phase epitaxial growth technology, offering low defect density and colorless transparency over the whole wafer surface.
Test of the new technology has shown the internal quantum efficiency of 90% at an injection current of 200mA. The GaN wafer achieves a luminous efficiency of 200lm/W, which is twice as much as the conventional materials. The GaN wafer is ideal for such applications as power devices for hybrid and electric vehicles as well as power amplifiers for cellular base stations.