Development of High-output, High-Efficiency 2GHz Power Amplifier for Mobile Communications Base Stations
June 26, 2012 · Filed Under Trendy Products
Mitsubishi Electric has release a prototype of high-output, high-efficiency 2GHz GaN (gallium nitride) transistors on a silicon (Si) substrate, a low cost alternative to more expensive silicon carbide (SiC). The new power amplifier achieves conversion efficiency rating of 70% with outputs of 150W or higher.
The new power amplifier is expected to contribute to design of more compact and power-efficient base station transmitters, where the installation of such equipment in tighter spaces will help to expand wireless network coverage resulting in increased wireless traffic due to smartphone proliferation.
