World’s First True Green Semiconductor Laser Diode with output power of over 100mW
Up to now, a typical green laser is generated through wavelength conversion of infrared laser light from a light source using optical materials; however the light source is large and pricy. Furthermore, conventional GaN based green lasers have difficulties achieving sufficient luminosity as their performance is limited to an output power of several tens of milliwatt at a wavelength of 520 nm or less. To overcome these technical issues, Sumitomo Electric and Sony have jointly developed world’s first true green semiconductor laser diode with output power of over 100 mW at 530 nm by using a semi-polar GaN substrate by improving the production techniques. One of the distinguishing feature of the new laser diode is that a semi-polar {2021} GaN substrate plane is tilted 75 degrees in comparison to the conventional GaN crystal c-plane, resulting in sustainable production of homogenous indium based active layers, leading to the successful growth of a high quality light-emitting layer.
In addition to this, Sumitomo Electric and Sony have successfully reduced the operating current and voltage in the laser through the optimization of the laser structure, impurity control in crystal as well as minimization of electrode resistance resulting in achieving an output power of 100 mW and a wall-plug efficiency of more than 8% at a wavelength of 530 nm.
Typical applications for this new technology includes advanced laser projectors with high luminosity and broad color gamut, as well as compact, light, energy-efficient laser projectors.
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