Development of Hybrid SiC Power Semiconductor for High-Frequency Switching Application
Mitsubishi Electric has announced the development of a new hybrid silicon carbide (SiC) power semiconductor module for high-frequency switching applications. The new SiC diodes feature a high efficiency, compact and light weight in inverters for power conditioners as well as other power equipment; uninterrupted power supplies (UPS) and medical power supplies. The new SiC-SBDs do not have recovery current, reducing the power loss by about 40% by significantly lowering switching loss.
Furthermore, the new modules are capable of suppressing voltage through internal inductance reduction. The 100A and 150A modules can reduce the internal inductance by about 30% compared to conventional IGBT module using silicon. The new module offers an easy replacement since the package is compatible with conventional power modules. The modules will be on display at Power Conversion Intelligent Motion Europe 2014, which will be held in Nuremberg, Germany from May 20 to 22.
Hybrid SiC Power Semiconductor ,High-Frequency Switching Application, Mitsubishi Electric, internal inductance reduction