Development of High Voltage IC for Power Semiconductor Industry
Mitsubishi Electric has announced the development of 1200 V high voltage IC (HVIC) equipped with desaturation detection for power semiconductors. The new M81748FP P-side and N-side desaturation detection will prevent overcurrent thermal destruction of power semiconductor using 1200 P-channel MOSFET. The HVIC is capable of directly detecting short and earth faults in power semiconductors on P-side and transmits fault signals to N-side, shutting down systems.
This will contribute to power loss reduction in power semiconductors. The new component uses s 1200 divided reduced surface fields (RESURF) structure for an optimized surface, hence preventing electric field concentration at the p-n junction resulting in a low current leakage of a maximum 10uA. The new M81748FP high tolerance to switching noise helps to achieve highly reliable inverter systems.