Development of Compact SiC Power Module with Low Operating Loss
SiCs’ superior material properties is expected to reduce the power consumption in various switching systems. Based on this technology Panasonic and Sansha Electric has jointly developed a compact SiC power module. The developed SiC DioMOS power module features a reverse conducting diode without any external diode.
Furthermore, the total chip area of SiC has been reduced to half in comparison to conventional SiC. The improved design of the module resulted in reduced on-state resistance to 6m ohm at 150A. The newly developed SiC power module integrates two SiC transistors into one package.