Development of STT-MRAM Circuit for SoC and High Performance Processor
Toshiba has announced the development of a spin-transfer torque magnetoresistive RAM (STT-MRAM) circuit for use in high performance processor as well as SoC integrated circuit with a 1Mb class of new magnetic materials.
The new STT-MRAM allows low power, high efficiency, and high speed performance in energy efficient magnetic tunnel junction (MTJ) memory. It is capable of 3.3-ns access to in-cache memory. The circuit consumes roughly 80% less power than conventional static RAM (SRAM) as an embedded memory.