Development of Industry’s Most Compact Enhanced Mode GaN Power Transistor
Panasonic has announced the development of world’s most compact gallium nitride (GaN) Power Transistor (X-GaN™) package. The new device comes in an 8×8 dual-flat no-lead (DFN) surface mount package. The small package allows the device to be mounted on small area where it is difficult to mount via conventional method resulting in a significant reduction in power consumption both in industrial as well as consumer electronics equipment.
The new power transistors offer a breakdown voltage of 600V in an enhancement mode while achieving a high speed switching of 200V/ns and low on-resistance of 54 to 154 milli-ohm.