Development of Industry Highest Power Performance Cache Memory

February 4, 2016 · Filed Under Trendy Products 

Toshiba 4Mb memory circuit
Toshiba has developed a 4-Mb class memory circuit based on STT-MRAM magnetic memory technology. The new technology integrates 65-nm silicon transistors. The new memory circuit features 3.3-ns memory access, ideal for cache memory due to its fast speed. It consumes only 1/10th of the energy that conventional integrated memory SRAM does.

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