Mitsubishi Electric has announced the addition of 3.5 GHz-band (Gallium Nitride High Electron Mobility Transistors) GaN-HEMT line-up for 4G Mobile communication base transceiver stations. The four new GaN-HEMTs offer high output power and efficiency. Among the product features are its flangeless ceramic package in 180W and 90W designed for macro-cell BTS as well as the plastic molded package in 7W and 5W models for micro-cell BTS. Their high efficiency helps to reduce the size and power consumption of BTS. The 90W model achieves high drain efficiency of 67 percent, while the 7W and 5W models have high drain efficiency of 67 percent. Furthermore, the high efficiency contributes to simpler cooling system resulting in a smaller size BTS operating at a lower consumption.
GaN-HEMTs,4G Mobile Communication ,Base Transceiver Station, Mitsubishi Electric