Development of High-output, High-Efficiency 2GHz Power Amplifier for Mobile Communications Base Stations

June 26, 2012 · Filed Under Trendy Products · Comments Off 

Mitsubishi Electric has release a prototype of high-output, high-efficiency 2GHz GaN (gallium nitride) transistors on a silicon (Si) substrate, a low cost alternative to more expensive silicon carbide (SiC). The new power amplifier achieves conversion efficiency rating of 70% with outputs of 150W or higher. Read more

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