Development of Multi-Application Single Level Cell NAND Flash Memory with Embedded Error Correction
Toshiba has announced the development of BENAND ™, a versatile, multi purpose single level cell (SLC) NAND flash memory equipped with advance embedded error correction code (ECC). Its applications include LCD TVs, digital cameras as well as robots and other industrial applications. The product comes in two capacities of 4 gigabit and 8 gigabit. BENAND is designed to remove the burden of ECC from the host processor while minimizing protocol changes as well as allowing host processors to support process NAND flash memory in a timely manner. The product embeds an ECC with an error correction of 4 bit per 512 bytes. Samples of the products are ready for shipment with mass production to commence from March 2012.
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Development of Half-Slim Type Solid Sate Drive Module by TDK
TDK with a history of achieving increases in the life spans of semiconductor memory storage devices has made an announcement on development of a new half slim type solid sate drive (SSD) modules. The new SHG2A series have a maximum capacity of 32GB, and about half the size of a 1.8-inch hard disk drive (HDD). The new SDDs are equipped with GBDrive RS2 series SATA controller ICs developed also by TDK. The SDDs support high speed access with an effective read speed of 95 MB/s and an effective write speed of 55 MB/s. Furthermore, they feature powerful error correction capabilities which is scalable to 15-bit/sector error correction code (ECC), resulting in high levels of data reliability. Additionally, the use of an internal power supply protection circuit prevents any errors in the event of power interruption. Read more
