Development of Industry’s First Ever High-Speed Non-Volatile Resistance Memory as a Promising Next-Generation Memory
In the world of memory there is no in between. There is always a compromise at some point or another. While dynamic random-access memory (DRAM) enjoys a superior read/write speeds and endurance over its non-volatile memory counter part, it has a tendency to quickly losing data when the power supply is turned off. On the other hand NAND flash memory a leading example of nonvolatile memory has it own set of performance issues while being capable of retaining data even when the power has turned OFF.
Now, in order to take advantage of best of these two worlds, while distancing ourselves away from their shortcomings, Elpida has come up with first ever high-speed non-volatile resistance memory for short ReRAM prototype. This new type of non-volatile memory, a promising next-generation semiconductor memory technology has a capability of high-speed read/write with very little voltage spent. Read more
Development of Industry’s First TSV Stacking Technology based DDR3 SDRAM by ELPIDA
Elpida Memory has announced the industry’s first DDR3 SDRAM which was developed based on TSV (Trough Silicon Via) stacking technology. The newly developed sample by Elpida is a low-power 8-gigabit (1-gigabyte) DDR3 SDRAM fabricated in a single package which is consists of four 2-gigabit DDR3 SDRAM fitted into a single interface chip using TSV. Read more
Development of World’s First 2-gigabit DRAM based on High-K Metal Gate Technology
Elpida Memory has announced the development of industry’s first DRAM based on high-k metal gate (HKMG) technology. The new DRAM is a 2-gigabit DDR2 Mobile RAM (LPDDR2) at the 40nm-class. HKMG is a technology that was developed to reduce current leakage and improving transistor performance. The technology uses insulator film with a high dielectric constant in the transistor gate. In addition to this, metal gate electrodes which are required in high-k dielectric process are used. Read more
Development of Ultra-Small 4 Gigabit DDR2 Mobile RAM by Elpida
Elpida Memory has announced the development of a new ultra small 4-gigabit DDR2 Mobile RAM operating at 1.2V and 1066Mbps based on 30nm process technology. The new memory chip consumes roughly 30% less operating current in comparison to stacking two of Elpida’s 40nm 2-gigabit products. Achieving industry’s smallest class in chip size for a 4-gigabit LPDDR2, this newly developed eco-friendly memory chip is equipped with a low power feature ideal for mobile devices such as smartphones and tablet PCs by helping to extend operating times of these battery powered devices. Read more
World’s Smallest Chip Size for a 2-Gigabit SDRAM by Elpida
Elpida has announced the development of 2-gigabit DDR3 SDRAM based on industry’s leading 25nm process for memory manufacturing. The newly developed SDRAM consumes less power in comparison to company’s 30nm process products through saving of electric current, which are 15% less operating current and 20% less standby current. Read more
