Development of New Series of FRAM for Industrial Applications by Fujitsu
Fujitsu Semiconductor America has introduced a new series of high-performance advanced Ferroelectric Random Access Memory (FRAM) products, designed for low-power industrial factory applications requiring high-performance, non-volatile memory. The three new devices namely MB85RSxxxSPI FRAM family comes in 256, 128 and 64-Kbit flash and they all operate at voltage ranges between 3.0V to 3.6V. The new series offer 10 billion write/read cycles, plus a data retention of 10 years at 55 degrees Celsius. Read more
Development of Novel Material for use in Involatile Phase-Change Random Access Memory
Group of Japanese researchers at Tohoku University has successfully developed materials for Ge-Cu-Te phase-change random access memories (PCRAM) featuring a high thermal stability and a low melting point. The new development was with an aim to resolve such problem as data loss under the environment at high temperature, helping to save data for period of ten years under the environment at more than 125 degrees Celsius. In addition to this the new material will help to reduce power consumption for data rewiring. Read more
