Development of Spintronics based MOSFET an Advance Semiconductor technology by TOSHIBA
On-going advancement in MOS field-effect transistor (MOSFET) devices as the result of continuing miniaturization of devices will inevitably hit its limit in view of such issues as performance degradation due to increase in resistance of global wiring and increase in power consumption caused by current leakage. In overcoming this issue spintronics has been considered as an ideal candidate among potential solutions in solving this issue, however the application of spintronics in transistors is at its early stage and it has been partially proved. Read more
