Development of High Breakdown Voltage Schottky Diode by Powdec
Powdec K.K. a Japanese venture company has announced successful development of a high breakdown voltage schottky diode using the next generation semiconductor Gallium Nitride (GaN). Through this development a proprietary method was developed where the sapphire substrate was removed, resulting in an improvement in the thermal conductance of the device. The high breakdown on this new diode is over 600 Volts with an on-resistance that is over 100 times smaller than currently used silicon power diodes, contributing to reduction of power losses by more than 50%. Read more
Production of Industry’s First 2-Inch Diameter Semipolar/Nonpolar GaN Substrates for Green Lasers
Sumitomo Electric has developed a production technology enabling the company to produce in a large scale industry’s first 2-inch diameter semipolar/nonpolar GaN (gallium nitride) substrates for green semiconductor lasers. The new production technology suppresses the piezoelectric effects on polarized substrates, resulting in an increase in devices luminous efficiency. Read more
Development of Industry’s First Commercially Feasible Gallium Nitride Transmission Photocathode
Hamamatsu Photonics made an announcement on successful development of first commercially workable GaN (gallium nitride) transmission photocathode that can be used for fast detection of extremely weak UV light signals. Hamamatsu is aiming for tripling the quantum efficiency of this newly developed photocathode in comparison to conventional CsTe (cesium telluride) photocathodes before its commercialization in spring of 2011, for its use in new image intensifiers. Read more
Development of an Amplifier based on Gallium Nitride HEMT Technology paving the way for Smaller, Lighter Radar Equipment and Wireless Communication System by FUJITSU
Fujitsu Laboratories made an announcement on development of a new amplifier based on gallium nitride (GaN) High Electron Mobility Transistor (HEMT) technology featuring output power of 12.9W, representing the world’s highest amplification output, when operating within wide band range of the C-band, X-band, and Ku-band radio frequency spectrums between 6GHz-18GHz. The use of new amplifier will contribute in development of smaller, lighter radar equipment as well as wireless communications systems that are capable of covering wide areas. In the past in order to achieve the output power needed to cover large spectrum such as the C- to Ku-bands, multiple transistors have been connected in parallel formation in order to create an amplification circuit, but since the circuit is physically longer, line loss increases and as a result making it difficult to extend coverage up to 18GHz. Read more
Development of World’s First Gallium Nitride High Electron Mobility Transistor for Satellite Application by Mitsubishi Electric
Mitsubishi Electric made an announcement on development of four models of gallium nitride high electron mobility transistor (GaN HEMT) specifically designed for 4.0 GHz band satellite applications with output power ranging from 2W to 100W, making the Mitsubishi Electric the first company in the world to market GaN HEMT based product specifically for satellite applications. The development by Mitsubishi Electric was a response to over growing demand for new microwave communication satellites, as more and more satellites are reaching the end of their operational lifespan. Read more
