Development of GaN Wafers Doubling Luminous Efficiency of LEDs
May 3, 2012 · Filed Under Green Tech · Comments Off
NGK Insulator Ltd, Japanese company based on Nagoya has announced the development of gallium nitride (GaN) wafer which would help to double the luminous efficiency of a Led light source. The new wafer has been developed based on liquid phase epitaxial growth technology, offering low defect density and colorless transparency over the whole wafer surface. Read more
