Development of Industry’s Most Compact Enhanced Mode GaN Power Transistor

May 28, 2015 · Filed Under Trendy Products · Comments Off on Development of Industry’s Most Compact Enhanced Mode GaN Power Transistor 

Panasonic Power Transistor
Panasonic has announced the development of world’s most compact gallium nitride (GaN) Power Transistor (X-GaN™) package. The new device comes in an 8×8 dual-flat no-lead (DFN) surface mount package. The small package allows the device to be mounted on small area where it is difficult to mount via conventional method resulting in a significant reduction in power consumption both in industrial as well as consumer electronics equipment. Read more

Development of High Breakdown Voltage Schottky Diode by Powdec

December 6, 2010 · Filed Under Green Tech · Comments Off on Development of High Breakdown Voltage Schottky Diode by Powdec 

Powdec K.K. a Japanese venture company has announced successful development of a high breakdown voltage schottky diode using the next generation semiconductor Gallium Nitride (GaN). Through this development a proprietary method was developed where the sapphire substrate was removed, resulting in an improvement in the thermal conductance of the device. The high breakdown on this new diode is over 600 Volts with an on-resistance that is over 100 times smaller than currently used silicon power diodes, contributing to reduction of power losses by more than 50%. Read more

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