Development of an Amplifier based on Gallium Nitride HEMT Technology paving the way for Smaller, Lighter Radar Equipment and Wireless Communication System by FUJITSU
Fujitsu Laboratories made an announcement on development of a new amplifier based on gallium nitride (GaN) High Electron Mobility Transistor (HEMT) technology featuring output power of 12.9W, representing the world’s highest amplification output, when operating within wide band range of the C-band, X-band, and Ku-band radio frequency spectrums between 6GHz-18GHz. The use of new amplifier will contribute in development of smaller, lighter radar equipment as well as wireless communications systems that are capable of covering wide areas. In the past in order to achieve the output power needed to cover large spectrum such as the C- to Ku-bands, multiple transistors have been connected in parallel formation in order to create an amplification circuit, but since the circuit is physically longer, line loss increases and as a result making it difficult to extend coverage up to 18GHz. Read more
