Development of Next Generation Silicon Carbide SBD featuring Lower Loss and Higher Voltage by ROHM
May 24, 2010 · Filed Under Trendy Products · 2 Comments
Rohm has successfully developed ,what company claims is the next generation Silicon Carbide (SiC) Schottky barrier diodes (SBD), featuring a lower loss and higher voltage capability in comparison to silicon based SBDs. This make the newly developed SCS110A series ideal for a wide range of applications, including PFC (Power Factor Correction) circuits, converters as well as inverters for power conversion such as the ones used in EV/HEV and air conditioning units. The new development was an answer to the over growing problem in power electronic sector with conversion losses which is generated in conventional (Si-based) semiconductor devices. Read more
