Development of World’s First 2-gigabit DRAM based on High-K Metal Gate Technology
Elpida Memory has announced the development of industry’s first DRAM based on high-k metal gate (HKMG) technology. The new DRAM is a 2-gigabit DDR2 Mobile RAM (LPDDR2) at the 40nm-class. HKMG is a technology that was developed to reduce current leakage and improving transistor performance. The technology uses insulator film with a high dielectric constant in the transistor gate. In addition to this, metal gate electrodes which are required in high-k dielectric process are used. Read more
