Development of Hybrid SiC Power Semiconductor for High-Frequency Switching Application

May 19, 2014 · Filed Under Trendy Products · Comments Off on Development of Hybrid SiC Power Semiconductor for High-Frequency Switching Application 

Mitsubishi ELectric Hybrid SiC
Mitsubishi Electric has announced the development of a new hybrid silicon carbide (SiC) power semiconductor module for high-frequency switching applications. The new SiC diodes feature a high efficiency, compact and light weight in inverters for power conditioners as well as other power equipment; uninterrupted power supplies (UPS) and medical power supplies. The new SiC-SBDs do not have recovery current, reducing the power loss by about 40% by significantly lowering switching loss. Read more

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