Development of a High Resolution Photo-Sensetive film for EUV lithography by TOSHIBA
With advancement of semiconductor technology as well as increase in wiring density use of the conventional polymer photoresists which is the base materials for conventional semiconductor resist will face some difficulties. With current scaling down of circuit pattern at the 20nm-scale generation the present photoresits will not be capable of resolving circuit patterns precisely resulting in roughness in pattern sidewalls, this is mostly due to the fact that the conventional photoresists consists of polymer compounds. Although, such compounds are easier to spin-cast on wafers, the size of their molecules and entangling of their molecular chains limit resolution. In response to overcome this issue, Toshiba has developed a photoresists with smaller molecular compounds for EUV (Extreme UltraViolet) generation by using derivative of truxene, a low molecular material with a finer and more durable characteristic than currently used polymer materials. Read more
