Development of a Breakthrough Technology for Achieving Low Voltage Operation in System LSI by TOSHIBA
February 8, 2010 · Filed Under Trendy Products · Comment
System LSI constitute the core components of digital products, where their operation voltage has a major impact on an overall power consumption of a product. However, up to now, voltage scaling of cutting edge system LSI has presented a big technological challenge due to loss of stability in memory function of its embedded SRAM which occurs at low voltage. The smaller size of the memory cell transistor of SRAM makes SRAM susceptible to transistor variability at low voltage in comparison to other logic circuits. In order to overcome this issue, Toshiba has developed a SRAM circuit technique which results in a low voltage operation in system LSI, paving the way in reduced power consumption in digital products. Read more
