Release of 52 New ARM Cortex M3 Core Microcontrollers for Home Appliances, Office Automation and Digital Consumer Products by Fujitsu Semiconductor

May 11, 2011 · Filed Under Trendy Products · 1 Comment 

Fujitsu Semiconductor America has extended its 32-bit microcontrollers (MCUs) lineup, by introducing 52 new ARM Cortex M3 Core based products designed for home appliance, office automation, as well as digital consumer products. The new products are part of Fujitsu’s FM3 family of controllers which company announced on Nov. 2010. The new product lineup offers embedded NOR flash memory from 64KB to 512KB designed for 100,000 write cycles which can retain data for up to 20 years, plus an increase in package options from 64-pin to 112-pin. Read more

Release of a New Group of Microcontrollers with Built-in flash and on-Chip touch Sensor Circuit for Smart phones by Renesas Electronics

February 17, 2011 · Filed Under Trendy Products · 1 Comment 

Adoption of touch panels for a wide range of applications has resulted in introduction of various products incorporating touch key functions with increasingly sophisticated applications. Typical, there are two microcontrollers (MCU) one to control the touch key and the other for system main control, but with industry’s demand for reduced space and cost, led the component manufacturers to develop flash MCU products with on-chip touch sensor circuits. One such company is Renesas Electronics. Renesas has released a new group of ultra-compact (3 x3 mm) MCUs with built-in flash memory and touch key functions ideal for products such as smart phones, mobile phones, e-book readers, digital cameras, as well as hand held game consoles. Read more

Introduction of Low Power Microcontrollers for Next Generation 8-bit Applications by Renesas Electronics

November 22, 2010 · Filed Under Green Tech, Trendy Products · 1 Comment 

Renesas Electronics has introduced a new series of low power, high performance (MCU), making them ideal for such applications including battery-operated devices and household applications. The new RL78 MCUs feature operating current of only 70 microamperes per megahertz and standby current of 0.7 microamperes with the real time clock (RTC) plus a low voltage detection (LVD) functions active. The new MCUs are designed based on 130-nm process node capable of delivering Dhrystone million instruction per second (DMIPS) during its operation at 32 MHz. Read more

Development of New Flash Memory Macro by FUJITSU

March 25, 2010 · Filed Under Green Tech, Trendy Products · 1 Comment 

Fujitsu Microelectronics has developed a new NOR flash memory macro, capable of high-speed read operations, while operating at low power currents. The new flash memory macro is guaranteed to retain program data storage for 20 years, or 100,000 write/erase cycles for data storage, and at the same time will improve the access speed by 2.5 times to 10 nanoseconds as well as reducing the required operating current per cell by two thirds to 9 microseconds, in comparison to Fujitsu’s previous products, according to the company. Read more

Development of world’s First high Reliability Read Method for use in Spin-Torque-Transfer (STT) MRAM

February 11, 2010 · Filed Under Trendy Products · 1 Comment 

Fujitsu STT MRAMSpin-Torque-Transfer (STT) MRAM is considered as a potential future form of non-volatile memory which can be used as an alternative to flash memory. Searching for an alternative low power non-volatile memory to the currently used NOR flash memory, which is embedded in microcontrollers in mobile phones as well as other electronic devices, is due to the fact that NOR flash memory is reaching the limits of its feasible miniaturization. The new alternative is expected to continue the necessary miniaturization. The practical implementation of STT MRAM faces several technical challenges, one of such challenges is due to the fact that STT MRAM requires memory storage elements that take advantage of the effect in which a current which is passed through a magnetic material such as a magnetic tunnel junction (MTJ) to revers its direction of magnetization, which has the effect of switching between a low resistance and high resistance, to be used for representing the 1s and 0s of digital information, in order for STT MRAM to be used as a non-volatile memory. However, reading the STT MRAM, in order to discover whether the MTJ offers high resistance to current (“1”) or low resistance (“0”) requires a relatively high amount of voltage to correctly determine whether its resistance is high or low. But current passed at this high voltage leaves very little difference between the read-current and the write-current, resulting in erroneous outcome, since any fluctuation in the electrical characteristics of individual MTJs could cause what was intended as a read-current, to have the effect of a wirte-current, resulting in reversal of the direction of magnetization of the MTJ. Read more

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