Mitsubishi Electric has developed industry’s first technology that combines voice recognition and drawing functionalities, enabling users to display their spoken words on a tablet or smartphone through simple dragging of their finger across the screen. The newly developed technology is expected to be combined with other functionalities such as picture drawings as well as multilingual translation assisting individuals with transcend disabilities and foreign languages. Read more
Mitsubishi Electric has announced the addition of 3.5 GHz-band (Gallium Nitride High Electron Mobility Transistors) GaN-HEMT line-up for 4G Mobile communication base transceiver stations. The four new GaN-HEMTs offer high output power and efficiency. Among the product features are its flangeless ceramic package in 180W and 90W designed for macro-cell BTS as well as the plastic molded package in 7W and 5W models for micro-cell BTS. Their high efficiency helps to reduce the size and power consumption of BTS. The 90W model achieves high drain efficiency of 67 percent, while the 7W and 5W models have high drain efficiency of 67 percent. Furthermore, the high efficiency contributes to simpler cooling system resulting in a smaller size BTS operating at a lower consumption.
GaN-HEMTs,4G Mobile Communication ,Base Transceiver Station, Mitsubishi Electric
Mitsubishi Electric has announced the launch of new tough series of 10.4-inch XGA TFT-LCD module for industrial applications such as construction, agriculture vehicles, factory automation and weaving equipment. Read more
Release of High Contrast, High Resolution, Wide viewing angles TFT-LCD Modules for Industrial Application
Release of High Contrast, High Resolution, Wide viewing angles TFT-LCD Modules for Industrial Application The new modules features a combination of suer-wide 170-degree horizontal/vertical viewing angles, high resolution, 500/600/1000 cd/m2 high brightness, 1000:1 high contrast ratio, -30 to 80 degrees Celsius operating temperature range, and 100,000 standard hours of LED backlight life. The sales of the new module will begin in August 1st through Mitsubishi Electric offices worldwide.
A current blocking structure with semi insulating semiconductors that feature high electrical resistance by way of doping impurity is showing a promising way to develop a distributed feed-back (DFB) laser with high speed response well suited for 25Gbps operation. However the high output power up to now was not possible to achieve due to poor current injection efficiency in the active region. To remedy this short coming Mitsubishi Electric has developed the new current blocking structure with semi-insulating semiconductors that achieves efficient current injection in the active region. The newly developed DFB laser diode which has been manufactured based on this new structure is suitable for 25Gbps optical fiber communication in 100Gbps systems operating in a wide range of temperatures from -20 to 85 degrees Celsius. Four DFB laser diodes can be mounted on 100Gbps high speed communication transceivers for optical fiber communication resulting in lower power consumption and enhanced communication performance making them ideal for use in data centers.
Mitsubishi Electric has come up with an innovative solution to minimize power generation drops in solar power plants. The new solution is capable of quickly detecting arc faults as well as isolating faulty circuits. Read more
Mitsubishi Electric has announced the development of 1200 V high voltage IC (HVIC) equipped with desaturation detection for power semiconductors. The new M81748FP P-side and N-side desaturation detection will prevent overcurrent thermal destruction of power semiconductor using 1200 P-channel MOSFET. The HVIC is capable of directly detecting short and earth faults in power semiconductors on P-side and transmits fault signals to N-side, shutting down systems. Read more
Mitsubishi Electric has launched of a dual low-side driver with over-current detection to drive power modules in inverter systems as well as air-conditioning systems. Read more
Mitsubishi Electric has developed a 638-nanometer (nm) wavelength red laser diode (LD) with output power of 1.8 W at continuous-wave operation, clicking the world’s highest level among the 638-nm LDs used as a light source for projectors. The luminosity of the new diode exceeds 220 lumens due to lasing at short wavelength. Read more
Mitsubishi Electric has announced the development of a new hybrid silicon carbide (SiC) power semiconductor module for high-frequency switching applications. The new SiC diodes feature a high efficiency, compact and light weight in inverters for power conditioners as well as other power equipment; uninterrupted power supplies (UPS) and medical power supplies. The new SiC-SBDs do not have recovery current, reducing the power loss by about 40% by significantly lowering switching loss. Read more