Development of Spintronics based MOSFET an Advance Semiconductor technology by TOSHIBA
On-going advancement in MOS field-effect transistor (MOSFET) devices as the result of continuing miniaturization of devices will inevitably hit its limit in view of such issues as performance degradation due to increase in resistance of global wiring and increase in power consumption caused by current leakage. In overcoming this issue spintronics has been considered as an ideal candidate among potential solutions in solving this issue, however the application of spintronics in transistors is at its early stage and it has been partially proved. Read more
Development of World’s First Low-Resistance 300A single-Chip SiC Trench MOSFET by ROHM
The inherent deficiency of silicon semiconductor devices during power conversion has forced many designers to look for alternative semiconductor material. One such material is silicon carbide due to its superior material properties leading to increase in power conversion efficiency in these type of devices. Power conversion modules for such application as electric vehicles,power transmission and railroads require a minimum current capacity of approximately 600A which is currently possible through parallel connection of several large area Si chip capable of outputting 200A to 300A. In order to increase current is necessary to reduce ON resistance while at the same time increasing the surface area of the chip. Even though the SiC features an excellent ON resistance characteristics increasing the area results in a greater number of crystal defects which leads to device failure. Read more
