Development of New Circuit Technology for SRAM Cutting Power Consumption of Electronic Devices by 57%
Toshiba has announced the development of a new circuit technique for embedded SRAM which can operate in a wide supply voltage range from 0.5 to 1.0V contributing to reduction in power consumption of electronic devices by 57%. At the same time the new technique will reduce the cell failure by 1/100 contributing to faster operation. Read more
