Development of High Threshold Voltage Control Nitride Semiconductor Power Transistor on Silicon Substrate by NEC
December 10, 2009 · Filed Under Trendy Products · Comments Off
NEC and NEC Electronics made an announcement on development of high threshold voltage control gallium Nitride power transistor on a silicon substrate. The new product has improved the control and suppression of electrical currents when electrical power is off which is a required feature for the safe operation of consumer electronics as well as IT devices.The new transistor comes with a new structure for the layer just beneath the gate electrode, resulting in improvement in controllability of threshold voltage that intercepts electrical current as well as enabling the achievement in low power loss, high speed switching and high temperature operations. Read more
