Release of High Performance SiC Diodes Capable of Boosting Power Conversion Efficiency in Solar Panel Inverters
ROHM Semiconductor has released a new series of high performance silicon carbide (SiC) Schottky barrier diode (SBD), featuring industry leading low forward voltage and fast recovery time, resulting in higher power conversion efficiency in such applications as PFC/power supplies, solar panel inverters, uninterruptible power supplies and air conditioners to name a few. Read more
Development of Next Generation Silicon Carbide SBD featuring Lower Loss and Higher Voltage by ROHM
Rohm has successfully developed ,what company claims is the next generation Silicon Carbide (SiC) Schottky barrier diodes (SBD), featuring a lower loss and higher voltage capability in comparison to silicon based SBDs. This make the newly developed SCS110A series ideal for a wide range of applications, including PFC (Power Factor Correction) circuits, converters as well as inverters for power conversion such as the ones used in EV/HEV and air conditioning units. The new development was an answer to the over growing problem in power electronic sector with conversion losses which is generated in conventional (Si-based) semiconductor devices. Read more
Development of World’s Smoothest Silicon Carbide Epitaxial Wafer Surface by SDK
Showa Denko made an announcement on development of highly smooth (0.4nm in roughness) surface for its largest size four-inch silicon carbide (SiC) epitaxial wafers. The wafers are made by forming a thin layer of single-crystal SiC on the surface of SiC bulk wafers. This new development is a significant improvement in surface roughness in comparison to the SiC epitaxial wafers that come with the roughness of 1 to 2.5 nm, world’s highest level at 0.4 nm. The target application for SiC epitaxial wafers would be in power devices such as inverters responsible for controlling rotation of motors in automobiles, train and industrial/home electric appliances, where the SiC epitaxial wafers will outperform the currently used silicon based semiconductor. Read more
