Development of Industry’s First Commercial IR-Enhanced Silicon Photodiodes by HAMAMATSU Photonics
January 18, 2010 · Filed Under Trendy Products · 1 Comment
Hamamatsu made an announcement on development of world’s first commercial silicon photodiodes featuring enhanced infrared sensitivity in the near-infrared region from 950 nm to 110 nm in comparison to the conventional silicon photodiodes. The enhanced infrared sensitivity was achieved through use of company’s proprietary laser processing technology designed to produce sensitivity boosting micro-structures on the silicon surface, ideal for producing various type of inexpensive and easy to use silicon detectors with enhanced infrared sensitivity. Read more
