Toshiba has developed a 4-Mb class memory circuit based on STT-MRAM magnetic memory technology. The new technology integrates 65-nm silicon transistors. The new memory circuit features 3.3-ns memory access, ideal for cache memory due to its fast speed. It consumes only 1/10th of the energy that conventional integrated memory SRAM does.
Toshiba has announced the development of a spin-transfer torque magnetoresistive RAM (STT-MRAM) circuit for use in high performance processor as well as SoC integrated circuit with a 1Mb class of new magnetic materials. Read more
Development of world’s First high Reliability Read Method for use in Spin-Torque-Transfer (STT) MRAM
Spin-Torque-Transfer (STT) MRAM is considered as a potential future form of non-volatile memory which can be used as an alternative to flash memory. Searching for an alternative low power non-volatile memory to the currently used NOR flash memory, which is embedded in microcontrollers in mobile phones as well as other electronic devices, is due to the fact that NOR flash memory is reaching the limits of its feasible miniaturization. The new alternative is expected to continue the necessary miniaturization. The practical implementation of STT MRAM faces several technical challenges, one of such challenges is due to the fact that STT MRAM requires memory storage elements that take advantage of the effect in which a current which is passed through a magnetic material such as a magnetic tunnel junction (MTJ) to revers its direction of magnetization, which has the effect of switching between a low resistance and high resistance, to be used for representing the 1s and 0s of digital information, in order for STT MRAM to be used as a non-volatile memory. However, reading the STT MRAM, in order to discover whether the MTJ offers high resistance to current (“1”) or low resistance (“0”) requires a relatively high amount of voltage to correctly determine whether its resistance is high or low. But current passed at this high voltage leaves very little difference between the read-current and the write-current, resulting in erroneous outcome, since any fluctuation in the electrical characteristics of individual MTJs could cause what was intended as a read-current, to have the effect of a wirte-current, resulting in reversal of the direction of magnetization of the MTJ. Read more